China develops chips without silicon

The research team at the University of Beijing announced creating a breakthrough in chip technology, capable of reshaping the semiconductor race, Interesting Engineering On 11/3 reported. New research published in magazines Nature Materials.

2D transistor (transistor) is considered to be 40% faster than Intel and TSMC’s latest 3 Nanomet 3 Nanomet Silicon Chip and TSMC, while consuming energy less than 10%. The website of Beijing University describes, this is the fastest, most effective semiconductor ball ever. According to the research team, this innovation may allow China to completely overcome the chips of silicon -based chip production.

Different from traditional silicon semiconductor balls, which are difficult to shrink and achieve high energy efficiency at extremely small scale, new design helps avoid these limitations. According to Professor Hoa Physics Peng Hailin, the leader of the research team, sanctions from the United States have limited access to China with the most advanced silicon semiconductor balls, motivating Chinese researchers to seek alternative solutions.

In the new study, the group of semiconductor development experts surrounding the gate effect (gaafet) uses Bismuth -original material. This design is a significant change compared to the structure of the financial effect of the fins (Finfet), which is a common standard since being commercialized by Intel in 2011.

The new Gaafet structure does not need to “siege” as in the Finfet design, allowing to increase the contact area between the gate and the canal. The team compares this change with the exchange of high -rise buildings into links, making the electron easier to move.

To optimize more performance, the research team uses 2D semiconductor materials. These materials have a evenly uniform atomic thickness and more mobility than silicon, which is a feasible alternative for the next generation chip. However, the efforts to use 2D materials in the previous semiconductor ball have encountered structural challenges, limiting their efficiency.

To overcome this obstacle, the group of experts from the University of Beijing manufactured the new Bismuth material, BI2O2SE and BI2SEO5, acting as a semiconductor material and high dielectric oxide. The high dielectric constant of these materials helps reduce energy losses, reduce voltage requirements and enhance calculation power while reducing energy consumption.

The researchers made a semiconductor ball with a high accuracy of the University of Beijing. The results showed that the BI2O2SE/BI2SEO5 material interface has fewer errors and the lines moving smoother than the current oxide – semiconductor interface. The team is going to expand production scale and has now built small logic units with new semiconductor balls.